Monitoring of ion implantation in microelectronics production environment using multi-channel reflectometry
Author:
Affiliation:
1. GLOBALFOUNDRIES Dresden Module One LLC & Co. KG (Germany)
2. Nova Measuring Instruments GmbH (Germany)
Publisher
SPIE
Reference16 articles.
1. Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage;Shamiryan,2012
2. Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers;Bincheng,2011
3. Introduction of infrared spectroscopic ellipsometry in a semiconductor production environment;Weidner,2003
4. Nondestructive determination of damage depth profiles in ion‐implanted semiconductors by spectroscopic ellipsometry using different optical models
5. Ion-beam-induced amorphization and recrystallization in silicon
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1. Supplementing rigorous electromagnetic modeling with atomistic simulations for optics-based metrology;Modeling Aspects in Optical Metrology VII;2019-06-21
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