A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

Published:2009-02-02 Issue:5 Volume:94 Page:053513
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Higashiwaki Masataka,Chen Zhen,Chu Rongming,Pei Yi,Keller Stacia,Mishra Umesh K.,Hirose Nobumitsu,Matsui Toshiaki,Mimura Takashi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3079798

Reference9 articles.

1. Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers

2. Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors

3. Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation

4. Trapping effects and microwave power performance in AlGaN/GaN HEMTs

5. Growth and passivation of AlGaN/GaN heterostructures

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Modulation Effect of LPCVD-Si_xN_y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure;IEEE Transactions on Electron Devices;2022-09

2. Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling;ACS Applied Materials & Interfaces;2021-12-07

3. Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs;Results in Physics;2021-12

4. Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps;Materials Science in Semiconductor Processing;2021-09

5. Study of bilayer Al2O3/in-situ SiNx dielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs;2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2021-04-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3