Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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2. Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance;Applied Physics Letters;2023-09-04
3. Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts;Journal of Applied Physics;2023-08-01
4. Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process;IEEE Electron Device Letters;2022-04
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