The Modulation Effect of LPCVD-Si x N y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure-Reference-Cited by-同舟云学术

The Modulation Effect of LPCVD-Si_xN_y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure

Published:2022-09 Issue:9 Volume:69 Page:4828-4834
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhu Liyang¹^ORCID,Zhou Qi¹^ORCID,Chen Kuangli¹,Gao Wei¹,Cai Yong²,Cheng Kai³,Li Zhaoji¹,Zhang Bo¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China

2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou, China

3. Enkris Semiconductor Inc., Suzhou, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Sichuan Science and Technology Program

GuangdongBasic andAppliedBasic Research Foundation, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9864631/09830588.pdf?arnumber=9830588

Reference31 articles.

1. Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition

2. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

3. Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN x Grown by Low Pressure Chemical Vapor Deposition

4. Robust SiN_x/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN_x Layer

5. Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation

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1. Ferroelectric passivation layer derived high performance AlGaN/GaN heterojunction field-effect transistor;Applied Physics Letters;2023-11-20

2. Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications;Micromachines;2023-11-16

3. High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiN_x gate insulator for high hole mobility;Journal of Semiconductors;2023-08-01