Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition

Published:2018-06-04 Issue:25 Volume:10 Page:21721-21729
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Xinyu¹,Wang Xinhua¹²^ORCID,Zhang Yange³,Wei Ke¹,Zheng Yingkui¹,Kang Xuanwu¹,Jiang Haojie⁴,Li Junfeng⁴,Wang Wenwu⁴,Wu Xuebang³,Wang Xianping³,Huang Sen¹²

Affiliation:

1. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

3. Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

4. Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Key Laboratory of Microelectronic Devices and Integrated Technology

University of Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science