Growth and passivation of AlGaN/GaN heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
2. Robust low microwave noise GaN MODFETs with 0.60 dB noise figure at 10 GHz
3. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
4. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
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1. Study the Sensing Performance with Catalytic Metals of Passivated InAlN/GaN Schottky Diode Gas Sensor;2022 IEEE VLSI Device Circuit and System (VLSI DCS);2022-02-26
2. Characterization of AlGaN/GaN high electron mobility transistors on GaN substrates with different thicknesses of GaN channel and buffer layers using side-gate modulation;Japanese Journal of Applied Physics;2021-12-15
3. Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures;Nanomanufacturing;2021-12-02
4. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications;Measurement;2021-12
5. Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors;Applied Physics Express;2021-09-01
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