Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1756215
Reference21 articles.
1. Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations
2. Performance advantage of schottky source/drain in ultrathin-body silicon-on-insulator and dual-gate cmos
3. Optimizing Schottky S/D offset for 25-nm dual-gate CMOS performance
4. Correlation between Schottky‐barrier height and the heat of formation of transition‐metal silicides
5. Metal–semiconductor junctions on p‐type strained Si1−xGex layers
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