Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations-Reference-Cited by-同舟云学术

Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations

Published:2002-07 Issue:7 Volume:46 Page:997-1004
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Dubois Emmanuel,Larrieu Guilhem

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. SIA Semiconductor Industry Association, `The International Technology Roadmap for Semiconductors––TRS', 1999

2. Analysis of the gate-voltage-dependent series resistance of MOSFET's;Ng;IEEE Trans Electron Dev,1986

3. Series resistance limits for 0.05 μm MOSFETs;Keys;Superlattices Microstruct,2000

4. 25 nm CMOS design considerations;Taur;IEDM Tech Dig,1998

5. Device design considerations for double-gate, ground-plane and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation;Wong;IEDM Tech Dig,1998

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