Correlation between Schottky‐barrier height and the heat of formation of transition‐metal silicides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354547
Reference18 articles.
1. Chemical Bonding and Structure of Metal-Semiconductor Interfaces
2. Interfacial Reaction and Schottky Barrier in Metal-Silicon Systems
3. Schottky-barrier heights of transition-metal-silicide–silicon contacts studied by x-ray photoelectron spectroscopy measurements
4. Chemical trend in silicide electronic structure and Schottky-barrier heights of silicide-silicon interfaces
5. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
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1. Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range;Journal of Electronic Materials;2022-12-08
2. Introduction to Schottky-Barrier MOS Architectures: Concept, Challenges, Material Engineering and Device Integration;Nanoscale CMOS;2013-03-05
3. Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes;Materials Science and Engineering: B;2008-12
4. Influence of surface cleaning effects on properties of Schottky diodes on 4H–SiC;Applied Surface Science;2008-10
5. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors;Journal of Applied Physics;2004-07
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