Sensitivity analysis for the determination of recombination parameters in Si wafers using harmonic carrier generation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360991
Reference10 articles.
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4. Measurement of Free‐Carrier Lifetimes in GaP by Photoinduced Modulation of Infrared Absorption
5. Injection‐level‐dependent recombination velocities at the Si‐SiO2 interface for various dopant concentrations
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