A contactless method for determination of carrier lifetime, surface recombination velocity, and diffusion constant in semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341097
Reference10 articles.
1. Theory of life time measurements with the scanning electron microscope: Steady state
2. Determination of lifetime and diffusion constant of minority carriers by a phase‐shift technique using an electron‐beam‐induced current
3. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements
4. Measurement of minority carrier lifetime in solar cells from photo-induced open-circuit voltage decay
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4. Separate determination of the photoelectric parameters of n + - p ( n )- p + silicon structure base region by noncontact method based on measurements of quantum efficiency relationships at two wavelengths;Modern Electronic Materials;2017-09
5. Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance;ECS Journal of Solid State Science and Technology;2017
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