A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement-Reference-Cited by-同舟云学术

A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement

Published:2018-06 Issue:6 Volume:8 Page:065218
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wei Yi¹,Lin Yiren¹,Yang Xichuan²,Tan Xin³,Su Jia⁴,Song Chengyuan¹,Liu Aimin¹

Affiliation:

1. School of Physics, Dalian University of Technology, Dalian 116024, Liaoning, China

2. State Key Laboratory of Fine Chemicals, Institute of Artificial Photosynthesis, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology, Dalian 116024, Liaoning, China

3. Solargiga Energy Holdings Ltd., Jinzhou 121000, China

4. Department of Biology, South University of Science and Technology of China, Shenzhen, Guangdong 518058, China

Funder

doctoral scientific research foundation of Liaoning province

SFR for ROCS,SEM

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5035503