Probing surface recombination velocities in semiconductors using two-photon microscopy
Author:
Affiliation:
1. Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
2. Maryland NanoCenter, University of Maryland, College Park, Maryland 20742, USA
Funder
University of Maryland (UMD)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4944597
Reference20 articles.
1. One- and two-photon-excited time-resolved photoluminescence investigations of bulk and surface recombination dynamics in ZnSe
2. Radiative recombination and ultralong exciton photoluminescence lifetime in GaN freestanding film via two-photon excitation
3. Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
4. Probing carrier lifetimes in photovoltaic materials using subsurface two-photon microscopy
5. Charge-carrier transport and recombination in heteroepitaxial CdTe
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