Separate determination of the photoelectric parameters of n + - p ( n )- p + silicon structure base region by noncontact method based on measurements of quantum efficiency relationships at two wavelengths-Reference-Cited by-同舟云学术

Separate determination of the photoelectric parameters of n + - p ( n )- p + silicon structure base region by noncontact method based on measurements of quantum efficiency relationships at two wavelengths

Published:2017-09 Issue:3 Volume:3 Page:127-130
ISSN:2452-1779
Container-title:Modern Electronic Materials
language:en
Short-container-title:Modern Electronic Materials

Author:

Koshelev Oleg G.,Vasiljev Nikita G.

Publisher

Pensoft Publishers

Subject

Automotive Engineering

Reference18 articles.

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4. Patent US 5438276 A. Apparatus for measuring the life time of minority carriers of a semiconductor wafer. Yutaka Kawata, Takuya Kusaka, Hidehisa Hashizume, Futoshi Ojima, 1995.

5. SEMI MF1535-0707. Test method for carrier recombination lifetime in silicon wavers by noncontact measurements of photoconductivity decay by microwave reflectance. URL: 〈http://ams.semi.org/ebusiness/standards/SEMIStandardDetail.aspx?ProductID=211&DownloadID=942〉 [accessed 23 March 2017].

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