Author:
Bogatov N M,Grigoryan L R,Klenevsky A V,Kovalenko M S,Volodin V S
Abstract
Abstract
The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of differential equations for the transport of charge carriers in inhomogeneous semiconductors. The calculated time dependences of the voltage change in the SCR for a pulse voltage change on the n+-p-p+ structure correspond to the experimental data.
Subject
General Physics and Astronomy
Reference13 articles.
1. On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon;Anfimov;Russian Microelectronics,2017
2. Separate determination of the photoelectric parameters of n+-p(n)-p+ silicon structure base region by noncontact method based on measurements of quantum efficiency relationships at two wavelengths;Koshelev;Modern Electronic Materials,2017
3. Minority Carrier Lifetime Measurements for Contactless Oxidation Process Characterization and Furnace Profiling;Bscheid;Materials,2019
4. 3D determination of the minority carrier lifetime and the p-n junction recombination velocity of a polycrystalline silicon solar cell;Sam;IOP Conf. Series: Materials Science and Engineering,2012
5. Pulse characteristics of silicon photovoltaic converters irradiated with low-energy protons;Bogatov;Technical Physics Letters,2021