Determination of lifetime and diffusion constant of minority carriers by a phase‐shift technique using an electron‐beam‐induced current
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329116
Reference25 articles.
1. Kinetics of recombination in nitrogen‐doped GaP
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4. Measurement of spatial variations of the carrier lifetime in silicon power devices
5. Theory of lifetime measurements with the scanning electron microscope: Transient analysis
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