Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance-Reference-Cited by-同舟云学术

Determination of the Recombination Velocity on Unequal Surfaces of Silicon Wafers from Two-Spectrum Excited Quasi-Steady-State Photoconductance

Published:2017 Issue:7 Volume:6 Page:N97-N103
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Wei Yi,Song Chengyuan,Li Ping,Tan Xin,Yuan Yonghai,Wang Yuxuan,Li Xiaoxuan,Zhou Ying,Bai Hongliang,Liu Aimin

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference35 articles.

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1. A novel analysis method to determine the surface recombination velocities on unequally passivated surfaces of a silicon wafer by the short wavelength spectrum excited quasi-steady-state photoconductance measurement;AIP Advances;2018-06