Measurement accuracy analysis of the free carrier absorption determination of the electronic transport properties of silicon wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference21 articles.
1. Contactless nondestructive measurement of bulk and surface recombination using frequency-modulated free carrier absorption
2. High‐resolution lifetime mapping using modulated free‐carrier absorption
3. Injection‐level‐dependent recombination velocities at the Si‐SiO2 interface for various dopant concentrations
4. Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation;Chinese Physics B;2014-11
2. Time domain theory of the electronic transport property of semiconductors measured by means of square-wave-modulated free carrier absorption technique;Acta Physica Sinica;2014
3. Carrier Diffusivity Measurement in Silicon Wafers Using Free Carrier Absorption;International Journal of Thermophysics;2013-05-24
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