Injection‐level‐dependent recombination velocities at the Si‐SiO2 interface for various dopant concentrations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356399
Reference8 articles.
1. High-efficiency silicon solar cells: Full factor limitations and non-ideal diode behaviour due to voltage-dependent rear surface recombination velocity
2. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2interface
3. Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination
4. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
5. Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures
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