Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces
Author:
Affiliation:
1. Department of Electric and Mechanical Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
2. Frontier Research Institute for Materials Science, Nagoya Institute of Technology, Nagoya 466-8555, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0007900
Reference40 articles.
1. Fundamentals of Silicon Carbide Technology
2. Status and Prospects of SiC Power Devices
3. 12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC
4. 4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n−Substrates
5. Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics
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