Surface recombination velocity measurements at the silicon–silicon dioxide interface by microwave‐detected photoconductance decay
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357082
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1. 27.5-percent silicon concentrator solar cells
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4. High-efficiency silicon solar cells: Full factor limitations and non-ideal diode behaviour due to voltage-dependent rear surface recombination velocity
5. Determination of Si-SiO/sub 2/ interface recombination parameters using a gate-controlled point-junction diode under illumination
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