Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer

Abstract

We report on the tunnel oxide passivated contact (TOPCon) using a crystalline nanostructured silicon-based layer via an experimental and numerical simulation study. The minority carrier lifetime and implied open-circuit voltage reveals an ameliorated passivation property, which gives the motivation to run a simulation. The passivating contact of an ultra-thin silicon oxide (1.2 nm) capped with a plasma enhanced chemical vapor deposition (PECVD) grown 30 nm thick nanocrystalline silicon oxide (nc-SiOx), provides outstanding passivation properties with low recombination current density (Jo) (~1.1 fA/cm2) at a 950 °C annealing temperature. The existence of a thin silicon oxide layer (SiO2) at the rear surface with superior quality (low pinhole density, Dph < 1 × 10−8 and low interface trap density, Dit ≈ 1 × 108 cm−2 eV−1), reduces the recombination of the carriers. The start of a small number of transports by pinholes improves the fill factor (FF) up to 83%, reduces the series resistance (Rs) up to 0.5 Ω cm2, and also improves the power conversion efficiency (PEC) by up to 27.4%. The TOPCon with a modified nc-SiOx exhibits a dominant open circuit voltage (Voc) of 761 mV with a supreme FF of 83%. Our simulation provides an excellent match with the experimental results and supports excellent passivation properties. Overall, our study proposed an ameliorated knowledge about tunnel oxide, doping in the nc-SiOx layer, and additionally about the surface recombination velocity (SRV) impact on TOPCon solar cells.