Systematic Modeling and Optimization for High‐Efficiency Interdigitated Back‐Contact Crystalline Silicon Solar Cells

Author:

Khokhar Muhammad Quddamah1,Yousuf Hasnain2,Alamgeer 2,Chu Mengmeng2,Ur Rahman Rafi1,Jony Jaljalalul Abedin2,Qamar Hussain Shahzada34,Pham Duy Phong1,Yi Junsin5ORCID

Affiliation:

1. Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 Republic of Korea

2. Interdisciplinary Program in Photovoltaic System Engineering Sungkyunkwan University Suwon 16419 Republic of Korea

3. STEM School of Engineering RMIT University 124 La Trobe Street Melbourne 3000 Australia

4. Department of Physics COMSATS University Islamabad Lahore Campus Lahore 54000 Pakistan

5. College of Information and Communication Engineering Sungkyunkwan University Gyeonggi‐Do 16419 Republic of Korea

Abstract

This study utilizes Quokka3, an advanced solar cell simulation program, specifically tailored for interdigitated back‐contact (IBC) crystalline silicon (c‐Si) solar cells. Through meticulous Quokka3 simulations, the influence of several geometric and wafer characteristics of the solar cell backside on current–voltage (IV) performance has been scientifically explored for IBC c‐Si solar cells. The investigation encompasses parameters such as wafer thickness, bulk lifetime, resistivity, emitter and back surface field area fraction, and front‐ and rear‐surface passivation. Optimal values for these parameters have been proposed to enhance the efficiency of IBC solar cells. These recommendations contain an emitter percentage of 70%, a wafer thickness ranging from 200 μm, a wafer resistivity of 1 Ω cm, and a wafer bulk lifetime of at least 10 ms. Moreover, under conditions where the cell is not short‐circuited, the potential for achieving higher cell efficiency, up to 26.64%, has been shown.

Funder

Ministry of Trade, Industry and Energy

Publisher

Wiley

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