AFORS-HET-based numerical exploration of tunnel oxide passivated contact solar cells incorporating n- and p-type silicon substrates-Reference-Cited by-同舟云学术

AFORS-HET-based numerical exploration of tunnel oxide passivated contact solar cells incorporating n- and p-type silicon substrates

Published:2024 Issue:31 Volume:14 Page:22253-22265
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Saeed Rabia¹,Tahir Sofia¹,Ali Adnan¹²,Albalawi Hind³,Ashfaq Arslan¹^ORCID

Affiliation:

1. Department of Physics, Government College University Faisalabad, 38000, Faisalabad, Punjab, Pakistan

2. London Centre for Energy Engineering (LCEE), School of Engineering, London South Bank University, London SE1 0AA, UK

3. Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University (PNU), P.O. Box 84428, Riyadh 11671, Saudi Arabia

Abstract

The development of a tunnel oxide interfacial layer capped by a highly doped poly-Si layer is considered one of the most promising methods to reduce charge carrier recombination and improve the performance of conventional PERC devices.

Funder

British Council

Princess Nourah Bint Abdulrahman University

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D4RA03286A

Reference49 articles.

1. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

2. Numerical analysis of dopant‐free asymmetric silicon heterostructure solar cell with SiO 2 as passivation layer

3. Numerical Simulation and Experiment of a High-Efficiency Tunnel Oxide Passivated Contact (TOPCon) Solar Cell Using a Crystalline Nanostructured Silicon-Based Layer

4. A novel cobalt-free oxide dispersion strengthened medium-entropy alloy with outstanding mechanical properties and irradiation resistance

5. Enhanced efficiency with CDCA co-adsorption for dye-sensitized solar cells based on metallosalophen complexes