Contactless measurement of bulk free‐carrier lifetime in cast polycrystalline silicon ingots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337202
Reference18 articles.
1. Carrier transport at grain boundaries in semiconductors
2. The determination of minority carrier lifetime in polycrystalline silicon by the photoconductivity decay method
3. Determination of carrier lifetime, diffusion length, and surface recombination velocity in semiconductors from photo-excited infrared absorption
4. Measurement of Free‐Carrier Lifetimes in GaP by Photoinduced Modulation of Infrared Absorption
5. Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption
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1. Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers;Journal of Applied Physics;2013-12-28
2. Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon;Journal of Applied Physics;2005-12-15
3. Carrier lifetime measurements using free carrier absorption transients. II. Lifetime mapping and effects of surface recombination;Journal of Applied Physics;1998-07
4. Carrier lifetime measurements using free carrier absorption transients. I. Principle and injection dependence;Journal of Applied Physics;1998-07
5. Sensitivity analysis for the determination of recombination parameters in Si wafers using harmonic carrier generation;Journal of Applied Physics;1996-02
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