Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes-Reference-Cited by-同舟云学术

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Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

Published:2010-03-29 Issue:13 Volume:96 Page:133502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bochkareva N. I.,Voronenkov V. V.,Gorbunov R. I.,Zubrilov A. S.,Lelikov Y. S.,Latyshev P. E.,Rebane Y. T.,Tsyuk A. I.,Shreter Y. G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3367897

Reference21 articles.

1. Performance of high-power III-nitride light emitting diodes

2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

3. Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes

4. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

5. Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells

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1. Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy;Physical Chemistry Chemical Physics;2024

2. Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes;Journal of Applied Physics;2022-11-07

3. Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics;Gallium Nitride Materials and Devices XVII;2022-03-05

4. Understanding Microscopic Properties of Light‐Emitting Diodes from Macroscopic Characterization: Ideality Factor, S‐parameter, and Internal Quantum Efficiency;physica status solidi (a);2022-02-20

5. Nonequilibrium Green’s Function Modeling of Trap-Assisted Tunneling in InxGa1−xN /GaN Light-Emitting Diodes;Physical Review Applied;2021-10-14

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