Understanding Microscopic Properties of Light‐Emitting Diodes from Macroscopic Characterization: Ideality Factor, S‐parameter, and Internal Quantum Efficiency-Reference-Cited by-同舟云学术

Understanding Microscopic Properties of Light‐Emitting Diodes from Macroscopic Characterization: Ideality Factor, S‐parameter, and Internal Quantum Efficiency

Published:2022-02-20 Issue:9 Volume:219 Page:2200042
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Shin Dong-Soo¹^ORCID,Shim Jong-In¹^ORCID

Affiliation:

1. Department of Photonics and Nanoelectronics and BK21 FOUR ERICA-ACE Center Hanyang University ERICA Ansan Gyeonggi-do 15588 Korea

Funder

Korea Evaluation Institute of Industrial Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200042

Reference26 articles.

1. Luminescence properties of defects in GaN

2. Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes

3. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

4. Study of degradation mechanism of blue light emitting diodes

5. Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

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