Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes

Published:2002-11-26 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Solid State Lighting II
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Author:

Cao Xian-an,Topol K.,Shahedipour-Sandvik F.,Teetsov J.,Sandvik Peter M.,LeBoeuf Stephen E.,Ebong Abasifreke,Kretchmer James W.,Stokes Edward B.,Arthur S.,Kaloyeros Alain E.,Walker D.

Publisher

SPIE

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding Microscopic Properties of Light‐Emitting Diodes from Macroscopic Characterization: Ideality Factor, S‐parameter, and Internal Quantum Efficiency;physica status solidi (a);2022-02-20

2. Differences in electrical responses and recovery of GaN p+n diodes on sapphire and freestanding GaN subjected to high dose 60Co gamma-ray irradiation;Journal of Applied Physics;2021-06-28

3. Measuring the surface temperature of light-emitting diodes by thermoreflectance;Japanese Journal of Applied Physics;2021-05-01

4. A Technique for Improving the Precision of the Direct Measurement of Junction Temperature in Power Light-Emitting Diodes;Sensors;2021-04-29

5. Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase;Japanese Journal of Applied Physics;2021-03-01

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