Nonequilibrium Green’s Function Modeling of Trap-Assisted Tunneling in InxGa1−xN /GaN Light-Emitting Diodes
Author:
Funder
U.S. Army Research Laboratory
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.16.044023/fulltext
Reference43 articles.
1. Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes
2. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
3. Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
4. Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap
5. Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs
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