Performance of high-power III-nitride light emitting diodes-Reference-Cited by-同舟云学术

Performance of high-power III-nitride light emitting diodes

Published:2008-05 Issue:5 Volume:205 Page:1086-1092
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Chen G.,Craven M.,Kim A.,Munkholm A.,Watanabe S.,Camras M.,Götz W.,Steranka F.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Ultra-High Efficiency White Light Emitting Diodes

2. The power conversion efficiency is often referred to as wall-plug efficiency.

3. Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

4. Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

5. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

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