Elimination of secondary defects in preamorphized Si by C+implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108968
Reference8 articles.
1. A systematic analysis of defects in ion-implanted silicon
2. Dual ion implantation technique for formation of shallowp+/njunctions in silicon
3. Point defect/dopant diffusion considerations following preamorphization of silicon via Si+and Ge+implantation
4. Defect annihilation in shallowp+junctions using titanium silicide
5. Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon
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4. Thermal Stability of Nickel Silicide and Shallow Junction Electrical Characteristics with Carbon Ion Implantation;Japanese Journal of Applied Physics;2010-04-20
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