Point defect/dopant diffusion considerations following preamorphization of silicon via Si+and Ge+implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99292
Reference7 articles.
1. Germanium Implantation into Silicon: An Alternate Pre‐Amorphization/Rapid Thermal Annealing Procedure for Shallow Junction Formation
2. Elimination of end‐of‐range and mask edge lateral damage in Ge+preamorphized, B+implanted Si
3. Influence of implant induced vacancies and interstitials on boron diffusion in silicon
4. Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized silicon
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