Thermal Stability of Nickel Silicide and Shallow Junction Electrical Characteristics with Carbon Ion Implantation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. NiSi salicide technology for scaled CMOS
2. Improvement of junction leakage of nickel silicided junction by a Ti-capping layer
3. Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition
4. Improved NiSi salicide process using presilicide N/sub 2//sup +/ implant for MOSFETs
5. Formation of Ni silicides on (001)Si with a thin interposing Pt layer
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1. Effects of crystallinity of silicon channels formed by two metal-induced lateral crystallization methods on the cell current distribution in NAND-type 3D flash memory;Japanese Journal of Applied Physics;2024-03-20
2. Phase evolution of ultra-thin Ni silicide films on CF4 plasma immersion ion implanted Si;Nanotechnology;2020-02-28
3. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
4. Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si1−xCx layers on Si(100);Applied Surface Science;2012-09
5. Source/drain technologies for the scaling of nanoscale CMOS device;Solid State Sciences;2011-02
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