Crystalline ZrTiO4 gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability-Reference-Cited by-同舟云学术

Crystalline ZrTiO4 gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability

Published:2015-02-02 Issue:5 Volume:106 Page:053508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wu Chao-Yi¹,Hsieh Ching-Heng¹,Lee Ching-Wei¹,Wu Yung-Hsien¹

Affiliation:

1. Department of Engineering and System Science, National Tsing Hua University, 300 Hsinchu, Taiwan

Funder

National Science Council of Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4907728

Reference20 articles.

1. Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

2. Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium

3. Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices

4. Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer

5. Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

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1. Structural, morphological and dielectric traits of $$\hbox {Zr}_{1-x}\hbox {Ca}_{{x}}\hbox {TiO}_{{4}}$$ Zr 1 - x Ca x TiO 4 ( $$x=0$$ x = 0 , 0.05, 0.10, 0.15 and 0.2) ceramics;Bulletin of Materials Science;2019-03-06

2. Crystallization behaviors of ultrathin Al-doped HfO 2 amorphous films grown by atomic layer deposition;Chinese Physics B;2017-02

3. Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature;Journal of Alloys and Compounds;2016-12

4. Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High- $\kappa $ ZrTiO4Gate Dielectric Featuring Low Equivalent-Oxide-Thickness;IEEE Transactions on Electron Devices;2016-06

5. Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance;Applied Physics Letters;2016-03-07