Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance-Reference-Cited by-同舟云学术

Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance

Published:2016-03-07 Issue:10 Volume:108 Page:103504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Park Jae Hyo¹²^ORCID,Joo Seung Ki¹²

Affiliation:

1. Department of Material Science and Engineering, Seoul National University, Seoul 151-742, South Korea

2. Eui-San Research Center, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-742, South Korea

Funder

BK21PLUS

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943786

Reference31 articles.

1. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

2. Landau theory of second-order phase transitions in ferroelectric films

3. Kinetics of ferroelectric switching in ultrathin films

4. Negative capacitance in a ferroelectric capacitor

5. Negative capacitance to the rescue?

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