Retraction: “Multibit ferroelectric field-effect transistor with epitaxial-like Pb(Zr,Ti)O3” [J. Appl. Phys. 119, 124108 (2016)]
Author:
Affiliation:
1. Department of Material Science and Engineering, Seoul National University, Seoul 151-742, South Korea
2. Eui-San Research Center, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-742, South Korea
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5010777
Reference6 articles.
1. Notice of Removal: A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O3 and ZrTiO4 Buffer for Long Retention and Good Fatigue
2. Ultimate multibit 1T-FeRAM with selectively nucleated grown single-grain PbZr0.52Ti0.48O3for very-large-scale-integrated memory
3. Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor
4. Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance
5. Notice of Removal: Quasi-Single-Grain Pb(Zr,Ti)O 3 on Poly-Si TFT for Highly Reliable Nonvolatile Memory Device
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