Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math> </inline-formula> ZrTiO4Gate Dielectric Featuring Low Equivalent-Oxide-Thickness-Reference-Cited by-同舟云学术

Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High- $\kappa $ ZrTiO4Gate Dielectric Featuring Low Equivalent-Oxide-Thickness

Published:2016-06 Issue:6 Volume:63 Page:2391-2397
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Park Jae Hyo,Han Ji Su,Joo Seung Ki

Funder

BK21 PLUS Project SNU Materials Division for Educating Creative Global Leaders

National Research Foundation of Korea through the Science Research Program within the Ministry of Education, Korea

Seoul National University through the Eui-San Research Center, Research Institute of Advanced Materials

glass substrate (Eagle XG) was provided by Corning Material Precision Company, Ltd., Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7473958/07466821.pdf?arnumber=7466821

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