Atomic-layer-deposited Al2O3–HfO2–Al2O3 dielectrics for metal-insulator-metal capacitor applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2005397
Reference15 articles.
1. RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications
2. High-κ gate dielectrics: Current status and materials properties considerations
3. PVD HfO2 for high-precision MIM capacitor applications
4. A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics
5. A capacitorless double-gate DRAM cell
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