RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications-Reference-Cited by-同舟云学术

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RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

Published:2004-06 Issue:6 Volume:51 Page:886-894
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shi-Jin Ding ,Hang Hu ,Chunxiang Zhu ,Sun Jung Kim ,Xiongfei Yu ,Ming-Fu Li ,Byung Jin Cho ,Chan D.S.H.,Yu M.B.,Rustagi S.C.,Chin A.,Dim-Lee Kwong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/28898/01300821.pdf?arnumber=1300821

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