A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics-Reference-Cited by-同舟云学术

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A high-density MIM capacitor (13 fF/μm/sup 2/) using ALD HfO2 dielectrics

Published:2003-02 Issue:2 Volume:24 Page:63-65
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Xiongfei Yu ,Chunxiang Zhu ,Hang Hu ,Chin A.,Li M.F.,Byung Jin Cho ,Dim-Lee Kwong ,Foo P.D.,Ming Bin Yu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/26904/01196017.pdf?arnumber=1196017

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