Optimum implantation conditions for ion beam synthesis of buried cobalt silicide layers in Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105438
Reference6 articles.
1. Mesotaxy: Single‐crystal growth of buried CoSi2layers
2. Ion beam synthesis of heteroepitaxial Si/CoSi2/Si structures
3. Formation of buried CoSi2 layers by ion implantation, studied by Mössbauer spectroscopy and rutherford backscattering spectroscopy
4. Formation of buried CoSi2 by ion implantation
5. Temperature and energy dependence of ion‐beam synthesis of epitaxial Si/CoSi2/Si heterostructures
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of substrate temperature on precipitate coarsening and Co distribution in Si implanted by Co ions with a metal vapour vacuum arc ion source;Semiconductor Science and Technology;1998-08-01
2. Transition metal silicides in silicon technology;Reports on Progress in Physics;1993-11-01
3. Epitaxial growth of CoSi2/Si structures;Applied Surface Science;1993-05
4. Fabrication of thin buried CoSi2 layers in Si(100) by ion beam synthesis;Thin Solid Films;1993-02
5. Ion beam synthesis of buried metallic and semiconducting silicides;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01
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