Mesotaxy: Single‐crystal growth of buried CoSi2layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97830
Reference12 articles.
1. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
2. Electrical transport properties of CoSi2and NiSi2thin films
3. Schottky-barrier heights of single-crystalNiSi2on Si(111): The effect of a surfacep-njunction
4. Schottky-barrier heights of single-crystalNiSi2on Si(111): The effect of a surfacep-njunction
5. Silicon on Insulator Formed By O+ OR N+ Ion Implantation
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