Abstract
ABSTRACTThe synthesis of buried layers of SiO2 and Si3N4, by ion implantation is reviewed. This process, which may be used to form device worthy silicon-on-insulator (SOI) structures, involves (i) implantation of O+ or N+ ions and (ii) high temperature processing to achieve defect annealing and chemical segregation of the implanted species.
Publisher
Springer Science and Business Media LLC
Cited by
58 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献