Temperature and energy dependence of ion‐beam synthesis of epitaxial Si/CoSi2/Si heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346438
Reference28 articles.
1. Study of ballistic transport in Si‐CoSi2‐Si metal base transistors
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4. Growth and Properties of Epitaxial Silicides on Si(III)
5. Properties of CoSi2 formed on (001) Si
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1. Dose-dependent precipitate evolution arising during implantation of Er into Si;Journal of Applied Physics;2005-04-15
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