Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers
Author:
Affiliation:
1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
Funder
German Research Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4962319
Reference46 articles.
1. Effects of plasma treatment on the Ohmic characteristics of Ti∕Al∕Ti∕Au contacts to n-AlGaN
2. Modulation of Surface Barrier in AlGaN/GaN Heterostructures
3. Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy
4. Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions
5. Surface recombination and sulfide passivation of GaN
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2. Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence;Journal of Electronic Materials;2020-05-14
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