Avoidance of instable photoluminescence intensity from AlGaN bulk layers-Reference-Cited by-同舟云学术

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Avoidance of instable photoluminescence intensity from AlGaN bulk layers

Published:2017-06-09 Issue:8 Volume:254 Page:1600672
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Netzel Carsten¹,Jeschke Jörg¹,Knauer Arne¹,Weyers Markus¹

Affiliation:

1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik; Gustav-Kirchhoff-Str. 4 12489 Berlin Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201600672/fullpdf

Reference24 articles.

1. Advances in group III-nitride-based deep UV light-emitting diode technology

2. Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

3. Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

4. Internal quantum efficiency in AlGaN with strong carrier localization

5. Optical properties of AlxGa1−xN alloy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability;Journal of Applied Physics;2019-05-14

2. Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice;Physical Review B;2018-04-23

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