Internal quantum efficiency in AlGaN with strong carrier localization
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4767657
Reference25 articles.
1. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
2. Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells
3. Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells
4. Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
5. Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes
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