Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1459106
Reference27 articles.
1. Luminescences from localized states in InGaN epilayers
2. The mechanism of radiative recombination in light-emitting devices composed on InGaN quantum wells
3. Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence
4. Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions
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