Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120966
Reference8 articles.
1. InGaN/AlGaN blue‐light‐emitting diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
4. Average inversion level, modeling, and physics of erbium-doped fiber amplifiers
5. Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxy
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