Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Strain-induced formation of self-assembled InGaN/GaN superlattices in nominal InGaN films grown by plasma-assisted molecular beam epitaxy

Published:2021-12-28 Issue:12 Volume:5 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Khan Kamruzzaman^ORCID,Sun Kai^ORCID,Wurm Christian,Datta Kanak^ORCID,Deotare Parag B.,Ahmadi Elaheh^ORCID

Funder

Office of Naval Research

National Science Foundation

University of Michigan

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.124606/fulltext

Reference56 articles.

1. Characteristics of InGaN multi‐quantum‐well‐structure laser diodes

2. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

5. Demonstration of Nonpolarm-Plane InGaN/GaN Light-Emitting Diodes on Free-Standingm-Plane GaN Substrates

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of 82% relaxed In_0.18G_a0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy;Physica Scripta;2023-12-29

2. Phonon modes and topological phonon properties in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x superlattices;Physica Scripta;2023-07-20

3. Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices;Discover Nano;2023-03-01

4. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01

5. Precise band gap engineering using double barrier InGaN/GaN superlattices;Micro and Nanostructures;2022-09

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